Title :
Selected topics on HfO2 gate dielectrics for future ULSI CMOS devices
Author :
Li, M.-F. ; Yu, H.Y. ; Hou, Y.T. ; Kang, J.F. ; Wang, X.P. ; Shen, C. ; Ren, C. ; Yeo, Y.C. ; Zhu, C.X. ; Chan, D.S.H. ; Chin, Albert ; Kwong, D.L.
Author_Institution :
Dept. of ECE, Singapore Nat. Univ., Singapore
Abstract :
Based on our recent investigation on HfO2 high-k gate dielectrics, we review the Hf based gate dielectric in the future ULSI CMOS devices in the following aspects: How long HfO2 can be used satisfactorily, assessed from the gate tunneling and scalability; how thin EOT can be grown technologically assessed by interfacial layer thickness; and how high operating voltage can be employed for 10 years reliable operation, assessed by charge trapping and threshold voltage shift.
Keywords :
CMOS integrated circuits; ULSI; dielectric materials; electron traps; hafnium compounds; tunnelling; EOT; HfO2; ULSI CMOS devices; charge trapping; gate dielectrics; gate tunneling; interfacial layer thickness; operating voltage; threshold voltage shift; Artificial intelligence; CMOS technology; Dielectric devices; Electrons; Gate leakage; Hafnium oxide; Leakage current; Tires; Tunneling; Ultra large scale integration;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435028
