DocumentCode
435753
Title
Selected topics on HfO2 gate dielectrics for future ULSI CMOS devices
Author
Li, M.-F. ; Yu, H.Y. ; Hou, Y.T. ; Kang, J.F. ; Wang, X.P. ; Shen, C. ; Ren, C. ; Yeo, Y.C. ; Zhu, C.X. ; Chan, D.S.H. ; Chin, Albert ; Kwong, D.L.
Author_Institution
Dept. of ECE, Singapore Nat. Univ., Singapore
Volume
1
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
366
Abstract
Based on our recent investigation on HfO2 high-k gate dielectrics, we review the Hf based gate dielectric in the future ULSI CMOS devices in the following aspects: How long HfO2 can be used satisfactorily, assessed from the gate tunneling and scalability; how thin EOT can be grown technologically assessed by interfacial layer thickness; and how high operating voltage can be employed for 10 years reliable operation, assessed by charge trapping and threshold voltage shift.
Keywords
CMOS integrated circuits; ULSI; dielectric materials; electron traps; hafnium compounds; tunnelling; EOT; HfO2; ULSI CMOS devices; charge trapping; gate dielectrics; gate tunneling; interfacial layer thickness; operating voltage; threshold voltage shift; Artificial intelligence; CMOS technology; Dielectric devices; Electrons; Gate leakage; Hafnium oxide; Leakage current; Tires; Tunneling; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1435028
Filename
1435028
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