Electronic behavior of high K oxides

Author

Robertson, J.

Author_Institution

Dept. of Eng., Cambridge Univ., UK

Volume

1

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

384

Abstract

Tight binding calculations are shown to have accurately predicted the band offsets of high K oxides for use in CMOS devices, both microprocessors and DRAMs. Pseudopotential calculations were used to derive the atomic structure of (100) interfaces between Si and high K oxides such as HfO₂. Interfaces with Ge were also calculated in view of the higher mobility of Ge. Recently, the possibility of a lack of Fermi level shifting at the gate electrode/oxide interface has been attributed to metal-Si bonds. These are indeed found to pin EF.

Keywords

CMOS integrated circuits; DRAM chips; dielectric materials; germanium; hafnium compounds; interface structure; microprocessor chips; silicon; CMOS devices; DRAM; Fermi level shifting; Ge; HfO₂; Si; atomic structure; electronic behavior; gate electrode; high K oxides; metal-Si bonds; microprocessors; oxide interface; pseudopotential calculations; tight binding calculations; Amorphous materials; Annealing; Dielectrics and electrical insulation; Electrodes; Hafnium; High K dielectric materials; High-K gate dielectrics; Leakage current; Microprocessors; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435031

Filename

1435031