DocumentCode :
435759
Title :
Reaction of interfacial layer and trapping in HfO2 gated MOS structures
Author :
Liu, Yanxiang ; Wang, X.W. ; Ma, T.P. ; Lee, Lurng-Shehng ; Tsai, Ming-Jinn ; Chou, Yu-Wei
Author_Institution :
Yale Univ., New Haven, CT, USA
Volume :
1
fYear :
2004
fDate :
18-21 Oct. 2004
Firstpage :
399
Abstract :
This paper presents experimental evidence of severe chemical reactions between physical-vapor-deposited (PVD) HfO2 and the underlying SiO2 interfacial layer, resulting in undesired trapping problems. In contrast, it will also show that HfO2 does not react with SiN. Correspondingly, MOS capacitors made with HfO2/SiN as the dielectric stack exhibit no trapping related problems at all. It should be noted that, the term SiN in this paper actually means SiON where the oxygen is unintentionally incorporated.
Keywords :
MIS structures; MOS capacitors; hafnium compounds; interface states; silicon compounds; vapour deposition; HfO2-SiN; MOS capacitors; MOS structures; SiN; SiO2; SiON; chemical reactions; dielectric stack; interfacial layer; physical vapor deposition; trapping problems; Atherosclerosis; Computed tomography; Dielectrics; Electron traps; Hafnium oxide; MOSFETs; Silicon compounds; Stress; Temperature measurement; Tiles;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
Type :
conf
DOI :
10.1109/ICSICT.2004.1435034
Filename :
1435034
Link To Document :
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