Title :
Study of nitridation plasma for ultra-thin gate dielectrics of 65 nm technology node and beyond
Author :
Wu, Hanming ; Goo, D. ; Mo, Mongxiang ; Zhou, Ning ; Chen, John ; Zhu, Bei ; Ning, Jay ; Bonfanti, Paolo ; Kuo, Jared ; Li, Ming
Author_Institution :
Semicond. Manuf. Int. Corp., Shanghai, China
Abstract :
In the present paper, to find the effective optimization of operation parameters in manufacturing, the gate dielectric nitridation in high-density plasma has been systematically studied by both theoretical and experimental methods. The experimental data are validated against the modeling results. Some plasma parameter correlation has been established to provide a guideline to optimize the nitridation profile in gate dielectric layer across wafer. It paves a way to make further improvement of device performance.
Keywords :
dielectric thin films; nitridation; plasma materials processing; 65 nm; device performance; gate dielectric layer; gate dielectric nitridation; high-density plasma; nitridation plasma; nitridation profile; plasma parameter correlation; ultra-thin gate dielectrics; Dielectrics; Electron mobility; Nitrogen; Plasma materials processing; Plasma simulation; Plasma sources; Plasma temperature; Pulp manufacturing; Radio frequency; Semiconductor device manufacture;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435038
