Study of nitridation plasma for ultra-thin gate dielectrics of 65 nm technology node and beyond

Author

Wu, Hanming ; Goo, D. ; Mo, Mongxiang ; Zhou, Ning ; Chen, John ; Zhu, Bei ; Ning, Jay ; Bonfanti, Paolo ; Kuo, Jared ; Li, Ming

Author_Institution

Semicond. Manuf. Int. Corp., Shanghai, China

Volume

1

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

415

Abstract

In the present paper, to find the effective optimization of operation parameters in manufacturing, the gate dielectric nitridation in high-density plasma has been systematically studied by both theoretical and experimental methods. The experimental data are validated against the modeling results. Some plasma parameter correlation has been established to provide a guideline to optimize the nitridation profile in gate dielectric layer across wafer. It paves a way to make further improvement of device performance.

Keywords

dielectric thin films; nitridation; plasma materials processing; 65 nm; device performance; gate dielectric layer; gate dielectric nitridation; high-density plasma; nitridation plasma; nitridation profile; plasma parameter correlation; ultra-thin gate dielectrics; Dielectrics; Electron mobility; Nitrogen; Plasma materials processing; Plasma simulation; Plasma sources; Plasma temperature; Pulp manufacturing; Radio frequency; Semiconductor device manufacture;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435038

Filename

1435038