DocumentCode
435764
Title
Plasma doping
Author
Mizuno, Bunji ; Sasaki, Yuichiro ; Jin, Cheun-Guo ; Tamura, Hideki ; Okashita, Katsumi ; Ito, Hiroyuki ; Tsutsui, Kazuo ; Iwai, Hiroshi
Author_Institution
Ultimate Junction Technol. Inc., Osaka, Japan
Volume
1
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
423
Abstract
The author´s group updates plasma doping with using He plasma amorphous (PA) technology and spectroscopic ellipsometry (SE). PD is a good alternative method for ultra shallow junction formation at 45nm technology node and beyond. The latest annealing method of laser annealing (LA) and flash lamp annealing (FLA) were combined with PD. Conventional spike RTA was also used for adequate junction depth with lower resistance.
Keywords
doping profiles; ellipsometry; helium; incoherent light annealing; laser beam annealing; plasma materials processing; semiconductor junctions; 45 nm; He; flash lamp annealing; junction depth; laser annealing; plasma amorphous technology; plasma doping; spectroscopic ellipsometry; spike RTA; ultra shallow junction formation; Amorphous materials; Annealing; Doping; Helium; Lamps; Plasma applications; Plasma immersion ion implantation; Plasma temperature; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1435040
Filename
1435040
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