Title :
Effects of substrate surface conditions on dose controllability of plasma doping process
Author :
Tsutsui, Kazuo ; Higaki, Ryota ; Sato, Takahisa ; Sasaki, Yuichiro ; Tamura, Hideki ; Mizuno, Bunji ; Iwai, Hiroshi
Author_Institution :
Dept. of Adv. Appl. Electron., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
Phenomena affecting dose control of plasma doping processes for fabrication of ultra shallow junctions were investigated. One was doping from neutral gas species during plasma doping, which was revealed by the experiment of plasma pre-treatment followed by gas phase doping of B. It was found that Ar or He plasma activated Si surface so that introduction of B from neutral B2H6 gas phase was enhanced. The other one was dose variation by chemical treatments using SPM or diluted HF. It was found that SPM treatment reduced loss of B dose in the following annealing process while HF treatment increased it.
Keywords :
argon; boron; boron compounds; helium; plasma materials processing; scanning probe microscopy; semiconductor doping; semiconductor junctions; silicon; Ar; Ar plasma; B; B2H6; He; He plasma; SPM treatment; Si; Si surface; annealing process; chemical treatment; diluted HF treatment; dose controllability; gas phase doping; neutral B2H6 gas phase; neutral gas species; plasma doping process; plasma pre-treatment; substrate surface conditions; ultra shallow junction fabrication; Argon; Chemical processes; Controllability; Doping; Fabrication; Hafnium; Helium; Plasma chemistry; Scanning probe microscopy; Surface treatment;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435043
