Title :
Texture of silicide films on Si(001): the occurrence of axiotaxy in cubic CoSi2, tetragonal α-FeSi2 and orthorhombic NiSi
Author :
Detavernier, C. ; Lavoic, C.
Author_Institution :
Dept. of Solid State Phys., Ghent Univ., Belgium
Abstract :
It was found that cubic CoSi2, tetragonal α-FeSi2 and orthorhombic NiSi films formed by the solid state reaction of metal films and single crystal Si(100) substrates are textured. The polycrystalline films consist of grains in which certain crystallographic planes align preferentially with [110]-type planes of Si, leading to an oil-normal fiber-like texture.
Keywords :
cobalt compounds; crystal structure; elemental semiconductors; iron compounds; metallic thin films; nickel compounds; silicon; CoSi2; FeSi2; NiSi; Si 110-type plane; axiotaxy occurrence; crystallographic planes; cubic CoSi2 film; metal films; oil-normal fiber-like texture; orthorhombic NiSi film; polycrystalline films; silicide films; single crystal Si(100) substrate; solid state reaction; tetragonal α-FeSi2 film; Crystalline materials; Crystallography; Electrons; Grain size; Semiconductor films; Silicides; Solid state circuits; Substrates; Transistors; X-ray scattering;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435044
