Title :
Ni silicide and Ni germanosilicide self-aligned process for 65nm and beyond CMOS technology by 2-step rapid thermal annealing
Author :
Mo, Hongxiang ; Bonfanti, Paolo ; Zhu, Bei ; Gao, David ; Wu, Hanming ; Chen, John ; Wu, Hui-Zhen ; Jiang, Yu-Long ; Ru, Guo-Ping ; Chen, Fairy
Author_Institution :
Semicond. Manuf. Int. Corp., Shanghai, China
Abstract :
Ni silicide and germanosilicide formation with one-step and two-step rapid thermal annealing are compared in this study. The 1st annealing temperature for NiSi and Ni(Si1-xGex) in two-step annealing process are investigated with sheet resistance measurements, X-ray diffraction and Auger election spectroscopy. Cross-sectional SEM shows the influence of rapid thennal annealing process on the uniformity of NiSi and Ni(Si1-xGex) films. Two-step annealing process was found to improve the uniformity of NiSi and Ni(Si1-xGex) films. The results indicate that two-step annealing process would be preferred for NiSi or Ni(Si1-xGex) formation on the ultra-shallow junction in the future CMOS technology nodes.
Keywords :
Auger electron spectroscopy; CMOS integrated circuits; Ge-Si alloys; X-ray diffraction; electric resistance; interface phenomena; metallic thin films; nanotechnology; nickel compounds; rapid thermal annealing; scanning electron microscopy; Auger election spectroscopy; CMOS technology; Ni germanosilicide formation; Ni germanosilicide self-aligned process; Ni silicide formation; Ni silicide self-aligned process; NiSi film; NiSi formation; NiSi1-xGex film; NiSi1-xGex formation; NiSiGe; X-ray diffraction; annealing temperature; cross-sectional SEM; one-step rapid thermal annealing; sheet resistance measurement; two-step rapid thermal annealing; ultra-shallow junction; CMOS process; CMOS technology; Electrical resistance measurement; Nominations and elections; Rapid thermal annealing; Rapid thermal processing; Silicides; Spectroscopy; Temperature; X-ray diffraction;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435048
