Fabrication and characteristics of Ti- and Ni-germanide Schottky contacts on n-Ge (100) substrates

Ti- and Ni-germanides were fabricated on n-Ge (100) substrates by sputtering metal Ti or Ni on Ge followed by a furnace annealing. The impacts of anneal temperature on the material the electrical properties of Ti- and Ni-germanide on n-Ge (100) substrates were investigated. The low temperature ∼300°C annealing helps to obtain the optimized Schottky contact characteristics in both Ti-germanide/Ge and Ni-germanide/Ge contacts. The well-behaved Ti-germanides/n-Ge Schottky contacts with 0.34eV barrier height were achieved by using a 300°C annealing process.