Electron beam lithography and its application in fabricating nano-device

Author

Ming, Liu ; Yulin, Qiu ; Chen-baoqin ; Qiuxia, Xiu ; Yinkui, Zheng

Author_Institution

Inst. of Microelectron., CAS, Beijing, China

Volume

1

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

563

Abstract

The nano-fabrications are playing an ever-increasing role in science and technology research. The electron beam lithography is the key technology to realize nano-fabrication. Electron beam lithography and structure of e-beam system are introduced in this paper. Some key technology such as the proximity effect correction, resist process, and mix & match lithography are investigated. The 0.1 μm GaAs PHEMT devices and 36nm CMOS device are successfully achieved by combining the above technology.

Keywords

CMOS integrated circuits; III-V semiconductors; electron beam lithography; gallium arsenide; high electron mobility transistors; nanotechnology; proximity effect (lithography); 0.1 micron; 36 nm; CMOS device; GaAs; PHEMT devices; e-beam system; electron beam lithography; mix & match lithography; nano-device fabrication; nanofabrication; proximity effect correction; resist process; Application software; CMOS technology; Control systems; Electron beams; Lithography; Microelectronics; Optical control; Optical scattering; Proximity effect; Resists;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435069

Filename

1435069