DocumentCode
435789
Title
ECR-plasma equipment application for nanotechnology
Author
Shapoval, Sergei ; Borodin, V. ; Gorbunov, V. ; Veretennikov, A.
Author_Institution
Inst. of Microelectron. Technol. RAS, Moscow, Russia
Volume
1
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
571
Abstract
Electron cyclotron resonance plasma system generated in a radially uniform magnetic field was used to produce a large area (15-20 cm diam) uniform plasma stream at 20-30 cm from the source output. The application of the ECR plasma for sub-100 nm T-shape gate of GaAs microwave transistor and microbridges of bolometric matrix was demonstrated.
Keywords
gallium arsenide; microwave transistors; nanotechnology; plasma radiofrequency heating; ECR-plasma equipment; GaAs microwave transistor; T-shape gate; bolometric matrix; electron cyclotron resonance plasma system; microbridges; nanotechnology; uniform magnetic field; Cyclotrons; Electrons; Gallium arsenide; Magnetic fields; Magnetic resonance; Microwave devices; Microwave transistors; Nanotechnology; Plasma applications; Plasma sources;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1435071
Filename
1435071
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