DocumentCode
435792
Title
Lubrication behavior in chemical-mechanical planarization
Author
Liang, H. ; Xu, G.
Author_Institution
Dept. of Mech. Eng., Alaska Univ., Fairbanks, AK, USA
Volume
1
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
594
Abstract
Chemical-mechanical planarization (CMP) is a synergistic tribological process. It occurs between a polymeric polishing pad, a wafer, and between which is a chemical slurry containing nanoabrasive particles. CMP functions similar to chemical boundary lubrication of mechanical systems, except that the objective of the CMP is to remove materials in a controlled manner. In this article, evidence is provided to discuss lubrication behavior during CMP.
Keywords
chemical mechanical polishing; lubrication; chemical boundary lubrication; chemical-mechanical planarization; lubrication behavior; mechanical systems; synergistic tribological process; Chemical processes; Friction; Lubrication; Planarization; Polymers; Rough surfaces; Slurries; Substrates; Surface roughness; Viscosity;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1435076
Filename
1435076
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