Title :
Silicon single-electron devices and their applications
Author :
Takahashi, Yasujo ; Ono, Yuto ; Fujiwara, Akira ; Inokawa, Hiroshi
Author_Institution :
Graduate Sch. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo, Japan
Abstract :
Single-electron devices (SEDs) are attracting a lot of attention as devices for future large-scale integration because of their inherent low power and small size. It is well known that SEDs have to have small islands together with tunnel barriers at both ends, which makes it difficult to make them. We have developed a novel method of fabricating small Si single-electron transistors (SETs) called pattern-dependent oxidation (PADOX) and used it to make many kinds of SEDs. The low power consumption of SEDs is useful for logic circuits. In addition, SETs have two unique features that conventional transistors do not have: multi-gate capability and conductance that oscillates as a function of gate voltage. We exploit these features to achieve complicated functions for logic circuits, such as multiple-valued logic.
Keywords :
elemental semiconductors; low-power electronics; multivalued logic circuits; oxidation; silicon; single electron transistors; Si; gate voltage; logic circuits; low power consumption; multigate capability; multiple-valued logic; pattern-dependent oxidation; silicon single-electron devices; tunnel barriers; CMOS technology; Conducting materials; Electrodes; Logic circuits; MOSFETs; Microcomputers; Silicon; Single electron devices; Single electron transistors; Voltage;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435083