Title :
Si multidot single-charge tunneling devices
Author :
Tabe, Michiharu ; Nuryadi, Ratno ; Ikeda, Hiroya ; Ishikawa, Yasuhiko
Author_Institution :
Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan
Abstract :
Si multidot single-charge tunneling devices have been studied from a view point of current modulation by means of light-illumination, side-gate and unintentional self-gate effect. The results provides us the preliminary basis of control of percolation path in a 2D-multidot plane as well as dynamical single-charge transport, which is essential for developing new functional devices.
Keywords :
electrical conductivity; elemental semiconductors; percolation; silicon; single electron devices; tunnelling; 2D-multidot plane; Si; Si multidot single-charge tunneling devices; current modulation; dynamical single-charge transport; light-illumination; percolation path; side-gate effect; unintentional self-gate effect; Automata; Automatic control; Charge carrier processes; Circuits; Electrons; Optical control; Optical device fabrication; Power dissipation; Tunneling; Voltage;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435084
