Title :
The prospect on semiconductor memory in nano era
Author :
Kim, Kinam ; Koh, Gwanhyeob
Author_Institution :
Memory Div., Samsung Electron. Co., Yongin, South Korea
Abstract :
For the prospects on future semiconductor memory, the key technical limits of future technology scaling in conventional memories and the directions to overcome the problems are reviewed. In addition, we reviewed the technical challenges and opportunities of emerging new memories such as FRAM (ferroelectric RAM), MRAM (magnetic RAM) and PRAM (phase-change RAM) which has been recently focused as candidates for idea memory which can solve the problems of conventional memories.
Keywords :
nanotechnology; random-access storage; ferroelectric RAM; magnetic RAM; nanoelectronics; phase-change RAM; semiconductor memory; Costs; Degradation; Doping; Ferroelectric films; FinFETs; Nonvolatile memory; Phase change random access memory; Random access memory; Read-write memory; Semiconductor memory;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435092
