Title :
Study on Pb(Zr, Ti)O3 capacitors for ferroelectric random access memory
Author :
Ze, Jia ; Jiachuan, Zhang ; Dan, Xie ; Zhigang, Zhang ; Tianling, Ren ; Litian, Liu
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
The PZT film capacitors for PeRAM need have ideal properties, such as low coercive voltage and high remanent polarization. The two types of PZT film prepared by sol-gel method with different ratio of Zr/Ti, such as 30/70 and 40/60, have difference and similarity on properties. The properties of ferroelectric capacitor are also related to the cell capacitor area due to the influence from the latter process and the conditions for testing. The properties of the PZT film with different amount of layers are discussed and compared.
Keywords :
ferroelectric capacitors; ferroelectric storage; lead compounds; random-access storage; sol-gel processing; titanium compounds; zirconium compounds; PZT; PZT film capacitors; PbZrO3TiO3; PeRAM; ferroelectric capacitor; ferroelectric random access memory; high remanent polarization; low coercive voltage; sol-gel method; Capacitors; Ferroelectric films; Ferroelectric materials; Hysteresis; Linearity; Polarization; Random access memory; Testing; Voltage; Zirconium;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435108
