• DocumentCode
    435831
  • Title

    Micromachined bulk acoustical-wave RF filters

  • Author

    Wang, Kun ; Bradley, Paul ; Gat, Moshe

  • Author_Institution
    Agilent Technologies Inc., San Jose, CA, USA
  • Volume
    3
  • fYear
    2004
  • fDate
    18-21 Oct. 2004
  • Firstpage
    1687
  • Abstract
    We present the performance of RF filters based on thin film bulk acoustical resonator (FBAR) technology for wireless communication applications. The filter is fabricated using surface micromachining processes and is hermetically sealed using wafer-level packaging with solder bumps on each electrical terminal, ready for flip-chip assembly. The size of the filter is less than 1 mm2 and the height is less than 0.35 mm. The typical broadband attenuation is better than 35 dB and passband insertion loss is less than 2 dB. The small size and good temperature stability make FBAR filters ideal choice for handset applications.
  • Keywords
    UHF filters; acoustic resonator filters; band-pass filters; bulk acoustic wave devices; electronics packaging; flip-chip devices; micromachining; micromechanical resonators; mobile radio; thin film devices; 1.6 to 2.3 GHz; broadband attenuation; flip-chip assembly; micromachined bulk acoustical-wave RF filters; mobile phone handsets; passband insertion loss; solder bumps; surface micromachining processes; temperature stability; thin film bulk acoustical resonator technology; wafer-level packaging; wireless communication; Assembly; Communications technology; Film bulk acoustic resonators; Hermetic seals; Micromachining; Radio frequency; Resonator filters; Transistors; Wafer scale integration; Wireless communication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
  • Print_ISBN
    0-7803-8511-X
  • Type

    conf

  • DOI
    10.1109/ICSICT.2004.1435156
  • Filename
    1435156