DocumentCode
435831
Title
Micromachined bulk acoustical-wave RF filters
Author
Wang, Kun ; Bradley, Paul ; Gat, Moshe
Author_Institution
Agilent Technologies Inc., San Jose, CA, USA
Volume
3
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
1687
Abstract
We present the performance of RF filters based on thin film bulk acoustical resonator (FBAR) technology for wireless communication applications. The filter is fabricated using surface micromachining processes and is hermetically sealed using wafer-level packaging with solder bumps on each electrical terminal, ready for flip-chip assembly. The size of the filter is less than 1 mm2 and the height is less than 0.35 mm. The typical broadband attenuation is better than 35 dB and passband insertion loss is less than 2 dB. The small size and good temperature stability make FBAR filters ideal choice for handset applications.
Keywords
UHF filters; acoustic resonator filters; band-pass filters; bulk acoustic wave devices; electronics packaging; flip-chip devices; micromachining; micromechanical resonators; mobile radio; thin film devices; 1.6 to 2.3 GHz; broadband attenuation; flip-chip assembly; micromachined bulk acoustical-wave RF filters; mobile phone handsets; passband insertion loss; solder bumps; surface micromachining processes; temperature stability; thin film bulk acoustical resonator technology; wafer-level packaging; wireless communication; Assembly; Communications technology; Film bulk acoustic resonators; Hermetic seals; Micromachining; Radio frequency; Resonator filters; Transistors; Wafer scale integration; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1435156
Filename
1435156
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