Nano-structured multi-layer SiGe alloy grown by ultra high vacuum chemical vapor deposition

Author

Ye, Zhizhen ; Wu, Guibin ; Huang, Jingyun ; Cui, Jifeng ; Sun, Weifeng ; Liu, Guojun ; Zhao, Binghui

Author_Institution

Zhejiang Univ., State Key Lab. of Silicon Materials, Hangzhou, China

Volume

3

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

2136

Abstract

High quality single-layer and multilayer nanostructured Si_1-xGe_x have been successfully grown on Si(100) substrates at low temperature by ultra-high vacuum chemical vapor deposition (UHV/CVD). The UHV/CVD system integrated three chambers into a whole and the growth chamber base pressure of 5.0 × 10^-8 Pa can be available. The nanostructures of SiGe/Si were characterized using high-resolution X-ray diffraction (HRXRD) and cross-sectional transmission electron microscopy (XTEM). The results show good crystal quality and sharp interfaces. This demonstrates further crystal quality improvements of nanostructured SiGe alloy may be available in the application of microelectronics and optoelectronics.

Keywords

Ge-Si alloys; X-ray diffraction; chemical vapour deposition; multilayers; nanostructured materials; semiconductor devices; transmission electron microscopy; HRXRD; Si_1-xGe_x; UHV/CVD; XTEM; cross-sectional transmission electron microscopy; crystal quality; high-resolution X-ray diffraction; microelectronics; multilayer nanostructured SiGe; optoelectronics; sharp interfaces; single-layer nanostructured SiGe; ultra-high vacuum chemical vapor deposition; Chemical vapor deposition; Epitaxial layers; Germanium silicon alloys; Nanoscale devices; Nanostructured materials; Semiconductor materials; Silicon germanium; Substrates; Temperature; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435265

Filename

1435265