Title :
Cascadable direct-coupled wideband SiGe HBT MMIC [amplifier]
Author :
Huang, Wentao ; Xiong, Xiaoyi ; Li, Gaoqing ; Zhang, Wei ; Li, Xiyou ; Liu, Zhihong ; Qian, Peixin
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
This paper reports the design and performance of a single-stage Darlington-structure SiGe hetero-junction bipolar transistor (HBT) microwave monolithic integrated circuit based on an advanced SiGe HBT technology. The circuit has 11.6 dB gain at 850 MHz and 8.0 dB gain at 1950 MHz. The input and output VSWRs are 3.01:1 and 2.66:1 at 3000 MHz, respectively. This circuit consumes 140 mW DC power and has a chip size of 0.32×0.42 mm2.
Keywords :
Ge-Si alloys; MMIC amplifiers; bipolar MMIC; heterojunction bipolar transistors; semiconductor materials; wideband amplifiers; 0.32 mm; 0.42 mm; 11.6 dB; 140 mW; 1950 MHz; 3000 MHz; 8.0 dB; 850 MHz; HBT MMIC; SiGe; VSWR; cascadable direct-coupled amplifier; single-stage Darlington-structure; wideband amplifier; Bipolar transistors; Broadband amplifiers; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; MMICs; Microwave technology; Monolithic integrated circuits; Silicon germanium;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435266
