• DocumentCode
    435855
  • Title

    Recent advances and applications of plasma immersion ion implantation

  • Author

    Chu, Paul K.

  • Author_Institution
    Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, Kowloon, China
  • Volume
    3
  • fYear
    2004
  • fDate
    18-21 Oct. 2004
  • Firstpage
    2172
  • Abstract
    Many new applications of plasma immersion ion implantation (PIII) have recently emerged. In addition to the surface modification and fabrication of conventional metallurgical and semiconductor materials and structures by PIII, new areas such as biomedical materials engineering and plasma treatment of insulating materials have attracted much attention. In this paper, the progress of our recent research work of PIII on microelectronics, namely the optical characteristics of hydrogen plasma implanted silicon and fabrication of novel silicon-on-insulator materials, are described.
  • Keywords
    diamond-like carbon; elemental semiconductors; hydrogen; photoluminescence; plasma immersion ion implantation; silicon; silicon-on-insulator; C; DLC films; PIII; Si:H; biomedical materials engineering; diamond-like-carbon thin film; hydrogen plasma implanted silicon optical characteristics; insulating material plasma treatment; low temperature photoluminescence; microelectronics; plasma immersion ion implantation; silicon-on-diamond materials; silicon-on-insulator materials; surface fabrication; surface modification; Biological materials; Biomedical engineering; Biomedical materials; Optical device fabrication; Optical materials; Plasma immersion ion implantation; Plasma materials processing; Plasma properties; Semiconductor materials; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
  • Print_ISBN
    0-7803-8511-X
  • Type

    conf

  • DOI
    10.1109/ICSICT.2004.1435274
  • Filename
    1435274