DocumentCode :
435855
Title :
Recent advances and applications of plasma immersion ion implantation
Author :
Chu, Paul K.
Author_Institution :
Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, Kowloon, China
Volume :
3
fYear :
2004
fDate :
18-21 Oct. 2004
Firstpage :
2172
Abstract :
Many new applications of plasma immersion ion implantation (PIII) have recently emerged. In addition to the surface modification and fabrication of conventional metallurgical and semiconductor materials and structures by PIII, new areas such as biomedical materials engineering and plasma treatment of insulating materials have attracted much attention. In this paper, the progress of our recent research work of PIII on microelectronics, namely the optical characteristics of hydrogen plasma implanted silicon and fabrication of novel silicon-on-insulator materials, are described.
Keywords :
diamond-like carbon; elemental semiconductors; hydrogen; photoluminescence; plasma immersion ion implantation; silicon; silicon-on-insulator; C; DLC films; PIII; Si:H; biomedical materials engineering; diamond-like-carbon thin film; hydrogen plasma implanted silicon optical characteristics; insulating material plasma treatment; low temperature photoluminescence; microelectronics; plasma immersion ion implantation; silicon-on-diamond materials; silicon-on-insulator materials; surface fabrication; surface modification; Biological materials; Biomedical engineering; Biomedical materials; Optical device fabrication; Optical materials; Plasma immersion ion implantation; Plasma materials processing; Plasma properties; Semiconductor materials; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
Type :
conf
DOI :
10.1109/ICSICT.2004.1435274
Filename :
1435274
Link To Document :
بازگشت