Title :
0.15 μm PHEMT 80 Gb/s selector
Author :
Yang, Shoujun ; Wang, Zhigong ; Zhu, En ; Feng, Jun ; Xiong, Minzhen
Author_Institution :
Inst. of RF-&OE-ICs, Southeast Univ., Nanjing, China
Abstract :
To avoid the drawbacks of conventional selectors, a newly designed one is presented. In this chip, lumped devices are replaced by distributed ones, for example transmission lines instead of inductors. The bottleneck in the realization of the high speed selector is broken through by designing a third order Butterworth filter. The problem in input matching is also solved by using the same type of filter. It is guaranteed that this chip, tapped out with 0.15 μm PHEMT (pseudomorphic high electron mobility transistor) technology, can work up to 80 Gb/s by analyzing the results obtained at 80, 90, and 100 Gb/s.
Keywords :
Butterworth filters; HEMT integrated circuits; field effect digital integrated circuits; high electron mobility transistors; integrated circuit design; microstrip filters; 0.15 micron; 80 to 100 Gbit/s; digital circuits; distributed devices; input matching; lumped devices; pseudomorphic high electron mobility transistors; selectors; third order Butterworth filter; transmission lines; Coplanar waveguides; Filters; Frequency; Impedance matching; PHEMTs; Parasitic capacitance; Q factor; Resistors; Signal analysis; Thin film inductors;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435291
