RESURF p-n Diode With a Buried Layer, a Comprehensive Study

Author

Fu-Jen Yang ; Jeng Gong ; Ru-Yi Su ; Chun-Lin Tsai ; Hsiao-Chin Tuan ; Chih-Fang Huang

Author_Institution

Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

60

Issue

11

fYear

2013

fDate

Nov. 2013

Firstpage

3835

Lastpage

3841

Abstract

In this paper, important parameters of the p-buried layer of a high-voltage reduced surface field p-n diode are analyzed and discussed in terms of effects on device performance, including breakdown voltage and specific turn-on resistance, R_on,sp. Guidelines for optimizing the vertical position, lateral location, and doping concentration of the p-buried layer are suggested. The experimental results demonstrate that the p-n diode with the proposed p-buried layer optimization design can improve breakdown voltage by 30.7% but only increases 2.7% in specific on-resistance R_on,sp.

Keywords

buried layers; semiconductor diodes; RESURF p-n diode; breakdown voltage; doping concentration; high-voltage reduced surface field p-n diode; lateral location; p-buried layer optimization design; specific turn-on resistance; vertical position; Avalanche breakdown; Electric potential; High-voltage techniques; Semiconductor diodes; Voltage control; Breakdown voltage; buried layer; p-n diode and reduced surface field (RESURF); power device;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2283582

Filename

6624119