Title :
Performance of AlGaN/GaN heterostructure FETs over temperatures
Author :
Lee, Chien-Chi ; Shih, Cheng-Feng ; Lee, Chien-Ping ; Tu, Ru-Chin ; Chuo, Chang-Cheng ; Chi, Jim
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The paper presents a comparison of the performance of undoped and modulation-doped AlGaN/GaN HFET devices over temperature. The results obtained indicate that the device structure has a significant influence on the device performance. The modulation-doped devices are superior to the undoped devices over the temperatures studied. The stability (the temperature dependence of device performance), however, is not as good as the undoped devices.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium compounds; semiconductor doping; semiconductor heterojunctions; thermal stability; AlGaN-GaN; aluminium gallium nitride/gallium nitride heterostructure FET; device performance; device structure; modulation-doped devices; stability; temperature dependence; undoped devices; Aluminum gallium nitride; Electron mobility; Epitaxial layers; FETs; Gallium nitride; HEMTs; MODFETs; Stability; Temperature dependence; Temperature measurement;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435296
