Title :
MOVPE growth of 980nm VCSEL using optical in-situ techniques
Author :
Bo, Yu ; Jun, Deng ; JianJun, Li ; Nanhui, Niu ; HongXing, Gai ; Jun, Han ; Peng, Lian ; YanHui, Xing ; Xia, Guo ; HongWei, Qu ; GuangDi, Shen
Author_Institution :
Inst. of Inf., Beijing Univ. of Technol., China
Abstract :
A 980 nm VCSEL was grown by LP-MOVPE. In-situ monitoring was carried out through reflectance measurements during the growth. Based on high quality material growth, a 980 nm VCSEL was also fabricated and tested. An output light power of 7.1 mW, lasing wavelength of 974 nm and slope efficiency of 0.462 mW/mA were obtained under CW conditions.
Keywords :
condition monitoring; light reflection; surface emitting lasers; vapour phase epitaxial growth; 7.1 mW; 974 nm; 980 nm; CW slope efficiency; LP-MOVPE growth; VCSEL; high quality material growth; lasing wavelength; low pressure MOVPE; metal organic vapour phase epitaxy; optical in-situ monitoring; reflectance measurements; Epitaxial growth; Epitaxial layers; Gallium arsenide; Molecular beam epitaxial growth; Monitoring; Optical arrays; Semiconductor laser arrays; Spectroscopy; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435314
