Correlation of oxygen precipitation and void annihilation in nitrogen-doped Czochralski silicon

The effect of oxygen precipitation on the annihilation of voids in nitrogen-doped Czochralski (NCZ) silicon has been investigated in this paper. It was found that, in comparison with the control CZ silicon wafers, the NCZ silicon wafer possessed denser crystal originated particles (COPs) in smaller size. On the other hand, it was indicated that, by low-high two step thermal cycles, the COPs in NCZ silicon could be annihilated in pace with the significant nitrogen enhanced oxygen precipitation, while the COPs in the CZ wafer were difficult to annihilate, accompanied with a slight oxygen precipitation. Based on these facts, the correlation of oxygen precipitation and void annihilation in NCZ silicon was discussed.