Title :
Effect of the V-O complexes on oxygen precipitation in neutron-irradiated silicon
Author :
Cui, Can ; Yang, Deren ; Ma, Xiangyang ; Yu, Xuegong ; Que, Duanlin
Author_Institution :
State Key Lab. of Silicon Mater., Zhejiang Univ., Hangzhou, China
Abstract :
The effect of the V-O complexes on oxygen precipitation in neutron-irradiated silicon has been investigated at low temperature in this paper. It is found that oxygen precipitation has been enhanced in neutron-irradiated silicon by prolonged annealing at 750°C, which is based on denser precipitate nuclei. Furthermore, by Fourier transform infrared spectrometry (FTIR) the VO complexes can transfer into VO2 and VO3 complexes during low temperature annealing. Based on these facts, it is reasonably deduced that in neutron irradiated silicon the VO complexes can become the pre-nuclei of oxygen precipitates at low temperature, and therefore enhance oxygen precipitation.
Keywords :
Fourier transform spectroscopy; annealing; elemental semiconductors; neutron effects; oxygen; precipitation (physical chemistry); silicon; 750 degC; FTIR; Fourier transform infrared spectrometry; O2; Si; V-O complexes; low temperature annealing; neutron-irradiated silicon; oxygen precipitation pre-nuclei; precipitate nuclei density; prolonged annealing; Annealing; Fourier transforms; Infrared spectra; Neutrons; Optical microscopy; Oxygen; Petroleum; Silicon; Spectroscopy; Temperature distribution;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435329
