Conductivity to first SBD of a stress induced leakage path in ultrathin thermal oxides

Author

Xu, Mingzhen ; Tan, Changhua ; He, Yandong

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

2

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

777

Abstract

The properties of detect current at first SBD is studied under constant voltage stress (CVS). It is experimentally shown that the logarithm of the conductivity as well as time-to-breakdown follows a reciprocal temperature dependence and a single path conductivity and time-to-breakdown are also strongly correlated, and obey a simple reci-symmetrical law.

Keywords

MOSFET; leakage currents; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; MOSFET; constant voltage stress; dielectric breakdown; reci-symmetrical law; reciprocal temperature dependence; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; single path conductivity; soft breakdown; stress induced leakage path; time-to-breakdown; ultrathin thermal oxides; Breakdown voltage; Electric breakdown; Helium; MOS devices; MOSFET circuits; Microelectronics; Partial response channels; Temperature dependence; Thermal conductivity; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1436622

Filename

1436622