Title :
Study on near-flatband-voltage SILC in ultra-thin plasma nitrided gate oxides
Author :
He, Yandong ; Mingzhen Zu ; Tan, Changhua
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
SILC has become more serious due to the aggressive scaling-down of the gate oxide thickness. In this paper, we investigate the near-flatband-voltage (NFB) SILC for both NMOS and PMOS with an EOT of 15A plasma nitrided gate oxide. The noticeable evolution of NFB SILC was observed. The generation kinetics of NFB SILC demonstrated the relationship with the density of stress-induced interface trap and the concentration of nitrogen incorporation near Si/SiO2 interface. The NFB SILC behavior of RTNO (rapid thermal oxynitride) and plasma nitrided oxide was compared in this paper.
Keywords :
MOSFET; interface states; ion implantation; leakage currents; nitrogen; semiconductor doping; silicon compounds; N; NMOS devices; PMOS devices; Si-SiO2; near-flatband-voltage SILC; nitrogen incorporation; plasma nitrided oxide; rapid thermal oxynitride; stress induced leakage current; stress-induced interface trap; ultra-thin plasma nitrided gate oxides; CMOS process; Capacitance-voltage characteristics; Feedback amplifiers; High-K gate dielectrics; Nitrogen; Plasma devices; Plasma materials processing; Plasma properties; Silicon; Stress;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436627
