DocumentCode
435881
Title
Mechanism of negative bias temperature instability for PMOSFET´s with thin gate oxide
Author
Liu, Hongxia ; Hao, Yue
Author_Institution
Microelectron. Inst., Xidian Univ., Shaanxi, China
Volume
2
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
824
Abstract
The negative bias temperature instability (NBTI) of deep-submicron PMOSFETs has been investigated. NBTI includes both interface states generation and positive fixed oxide charges formation in the gate oxide, which play major roles for its degradation mechanism. The degradation characteristics of PMOSFETs are investigated thoroughly. A simple degradation model is proposed that fully accounts for this observation.
Keywords
MOSFET; semiconductor device breakdown; semiconductor device reliability; PMOSFET; degradation mechanism; device reliability; gate oxide; interface states; negative bias temperature instability; positive fixed oxide charges; Degradation; Hot carriers; Interface states; MOSFET circuits; Negative bias temperature instability; Niobium compounds; Stress; Titanium compounds; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1436634
Filename
1436634
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