Title :
Mechanism of negative bias temperature instability for PMOSFET´s with thin gate oxide
Author :
Liu, Hongxia ; Hao, Yue
Author_Institution :
Microelectron. Inst., Xidian Univ., Shaanxi, China
Abstract :
The negative bias temperature instability (NBTI) of deep-submicron PMOSFETs has been investigated. NBTI includes both interface states generation and positive fixed oxide charges formation in the gate oxide, which play major roles for its degradation mechanism. The degradation characteristics of PMOSFETs are investigated thoroughly. A simple degradation model is proposed that fully accounts for this observation.
Keywords :
MOSFET; semiconductor device breakdown; semiconductor device reliability; PMOSFET; degradation mechanism; device reliability; gate oxide; interface states; negative bias temperature instability; positive fixed oxide charges; Degradation; Hot carriers; Interface states; MOSFET circuits; Negative bias temperature instability; Niobium compounds; Stress; Titanium compounds; Tunneling; Voltage;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436634
