Interface trap generation on thin SiO2 and plasma-nitrided SiO2 gate dielectrics under static and dynamic stresses

Interface trap generation under static and dynamic (bipolar and unipolar) oxide field stresses has been investigated using the forward-biased gate-controlled-diode (GCD) measurement on n-channel MOSFETs. It is observed that the interface traps are generated more efficiently under dynamic stress than under static stress, and that bipolar stress creates more interface traps than unipolar stress. The interface trap generation under dynamic stress is almost independent of stressing frequency at the region of 10⁴ Hz, while it increases with frequency in the region of 10⁴-10⁶ Hz, and decreases at the frequency beyond 10⁷ Hz. The nitrided SiO₂ samples show higher interface trap generation and stronger frequency dependence than the pure SiO₂ counterpart.