Title :
A new observation of hot-carrier induced interface traps spatial distribution in 0.135 μm n-MOSFET by gate-diode method
Author :
Zhao, Yao ; Xu, Mingzhen ; Tan, Changhua
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
In this work, the interface traps spatial distribution in 0.135 μm n-MOSFET under VG = VD/2 stress mode by gated-diode method was studied. Not only interface traps generated in drain region trend to saturate at the beginning of hot carrier stress, but also interface traps generated in channel may trend to saturate. Interface traps generated in source region show no saturation and increase device source-drain parasitic resistance linearly along stress time. This experiment result is tentatively interpreted by MRS model that the distance from mobile hydrogen generating location to interface location determines interface traps generation rate and saturation time at interface location.
Keywords :
MOSFET; electron traps; hot carriers; semiconductor device breakdown; semiconductor device reliability; 0.135 micron; drain region; gate-diode method; hot carrier stress; interface traps spatial distribution; n-MOSFET; source-drain parasitic resistance; stress mode; stress time; Current measurement; Degradation; Diodes; Hot carriers; MOSFET circuits; Microelectronics; Space charge; Stress; Tunneling; Virtual colonoscopy;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436638
