A new observation of hot-carrier induced interface traps spatial distribution in 0.135 μm n-MOSFET by gate-diode method

Author

Zhao, Yao ; Xu, Mingzhen ; Tan, Changhua

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

2

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

839

Abstract

In this work, the interface traps spatial distribution in 0.135 μm n-MOSFET under V_G = V_D/2 stress mode by gated-diode method was studied. Not only interface traps generated in drain region trend to saturate at the beginning of hot carrier stress, but also interface traps generated in channel may trend to saturate. Interface traps generated in source region show no saturation and increase device source-drain parasitic resistance linearly along stress time. This experiment result is tentatively interpreted by MRS model that the distance from mobile hydrogen generating location to interface location determines interface traps generation rate and saturation time at interface location.

Keywords

MOSFET; electron traps; hot carriers; semiconductor device breakdown; semiconductor device reliability; 0.135 micron; drain region; gate-diode method; hot carrier stress; interface traps spatial distribution; n-MOSFET; source-drain parasitic resistance; stress mode; stress time; Current measurement; Degradation; Diodes; Hot carriers; MOSFET circuits; Microelectronics; Space charge; Stress; Tunneling; Virtual colonoscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1436638

Filename

1436638