Bottom-up silicon nanoelectronics

Author

Mizuta, Hiroslu ; Khalafalla, Mohammed ; Durrani, Zahid A K ; Uno, Shigeyasu ; Koshida, Nobuyoshi ; Tsuchiya, Yoshihige ; Oda, Shunri

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

Volume

2

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

864

Abstract

This paper presents an overview on recent topical studies on electronic properties and device applications of silicon nanodots as a bottom-up building block for silicon nanoelectronics. The electrostatic and quantum-mechanical interactions in double Si nanodots, the phononic states and electron-phonon interactions in the linear chain of Si nanodots covered with thin oxide layers, and the nonvolatile nanoelectromechanical memory device incorporating Si nanodots are discussed.

Keywords

electron-phonon interactions; electrostatics; elemental semiconductors; nanoelectronics; semiconductor quantum dots; silicon; Si; device applications; electron-phonon interactions; electronic property; electrostatic interaction; nanoelectromechanical memory device; phononic states; quantum-mechanical interaction; silicon nanodots; silicon nanoelectronics; thin oxide layers; Electrons; Laboratories; Nanoelectronics; Nanoscale devices; Nanostructures; Nanowires; Plasma temperature; Semiconductor films; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1436644

Filename

1436644