Advances in Si-based nanotechnology and quantum devices

The preparation technologies of nanostructures were reviewed in tins paper, included nanofabrication and self-assembled growth technique. With the down sizing of present silicon IC technology, validity of Moore´s law has become seemingly limited, because the feature size of Si ULSI has reached nanometer regime. It is unavoidable that quantum effects play very important role in the nanoarchitectures. Microelectronic industry faces the severe challenge and opportunities. However, it is undoubted that the novel materials, for example, carbon nanotubes, will provide some solution for future nanoscaling architectures and devices, such as CNT-FET, but it is still a question whether CNT-based technology will actually contribute to the existing CMOS technology or it is totally new device architecture from CMOS technology. The Si-based quantum devices, included electronic and optoelectronic devices, are presented in this paper, they are based on quantum effects and fabricated by the processing compatible with Si IC technology.