• DocumentCode
    435890
  • Title

    Silicon nanocrystal memories

  • Author

    Shi, Y. ; Yang, H.G. ; Lv, J. ; Pu, L. ; Zhang, R. ; Shen, B. ; Zheng, Y.D.

  • Author_Institution
    Dept. of Phys., Nanjing Univ., China
  • Volume
    2
  • fYear
    2004
  • fDate
    18-21 Oct. 2004
  • Firstpage
    881
  • Abstract
    In this paper, we firstly present an overview of silicon nanocrystal memories. The performance and fabrication characteristics of the hetero-nanocrystal memories are mainly studied. These devices demonstrate high promising potential as candidates for future deep-submicron embedded memories.
  • Keywords
    elemental semiconductors; nanoelectronics; semiconductor storage; silicon; Si; deep-submicron embedded memory; fabrication characteristics; hetero-nanocrystal memory; silicon nanocrystal memory; Fabrication; Low voltage; MOSFET circuits; Nanocrystals; Nonvolatile memory; Physics; Random access memory; Silicon; Tunneling; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
  • Print_ISBN
    0-7803-8511-X
  • Type

    conf

  • DOI
    10.1109/ICSICT.2004.1436647
  • Filename
    1436647
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=435890