Title :
Silicon nanocrystal memories
Author :
Shi, Y. ; Yang, H.G. ; Lv, J. ; Pu, L. ; Zhang, R. ; Shen, B. ; Zheng, Y.D.
Author_Institution :
Dept. of Phys., Nanjing Univ., China
Abstract :
In this paper, we firstly present an overview of silicon nanocrystal memories. The performance and fabrication characteristics of the hetero-nanocrystal memories are mainly studied. These devices demonstrate high promising potential as candidates for future deep-submicron embedded memories.
Keywords :
elemental semiconductors; nanoelectronics; semiconductor storage; silicon; Si; deep-submicron embedded memory; fabrication characteristics; hetero-nanocrystal memory; silicon nanocrystal memory; Fabrication; Low voltage; MOSFET circuits; Nanocrystals; Nonvolatile memory; Physics; Random access memory; Silicon; Tunneling; Very large scale integration;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436647
