Title :
Charging and Coulomb blockade effects in nanocrystalline Si dots embedded in SiO2 matrix
Author :
Wu, Liangcai ; Chen, Kunji ; Dai, Min ; Yu, Linwei ; Han, Peigao ; Zhu, Da ; Li, Wei ; Huang, Xinfan
Abstract :
By using capacitance-voltage (C-V) and conductance-voltage (G-V) spectroscopy, we studied charging and Coulomb blockade effects in nanocrystalline Si (nc-Si) dots which are embedded in SiO2 matrix. Distinct frequency-dependent capacitance and conductance peaks have been observed at room temperature. These experimental results can be explained by resonant tunneling of electrons or holes into the nc-Si dots and Coulomb blockade effect in the nc-Si dots. Experimental results are in agreement with theoretical evaluation based on the model of Coulomb blockade.
Keywords :
Coulomb blockade; elemental semiconductors; nanostructured materials; resonant tunnelling; semiconductor quantum dots; silicon compounds; Coulomb blockade effect; SiO2; SiO2 matrix; capacitance-voltage spectroscopy; conductance-voltage spectroscopy; electron resonant tunneling; frequency-dependent capacitance; nanocrystalline Si dots; Capacitance; Capacitance-voltage characteristics; Charge carrier processes; Frequency; Hydrogen; Nanoscale devices; Oxidation; Plasma chemistry; Spectroscopy; US Department of Transportation;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436651
