DocumentCode
435897
Title
Composition of nanometer-scaled self-assembled SiGe islands
Author
Deng, Ning ; Zhang, Lei ; Chen, Peiyi
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Volume
2
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
910
Abstract
Quantitative relation between composition of self-assembled SiGe islands and critical size for shape evolution was established. The critical size, at which Ge islands change from pyramids to domes, increases with increasing of Si concentration in islands. Based on the critical size obtained from AFM characterization of SiGe islands, the composition of nanometer-scaled SiGe islands was calculated from the dependence of critical size of shape transition on the Si concentration.
Keywords
Ge-Si alloys; atomic force microscopy; nanostructured materials; self-assembly; AFM characterization; Si concentration; SiGe; critical size; nanometer-scaled SiGe; shape evolution; Atomic force microscopy; Atomic measurements; Force measurement; Germanium silicon alloys; Microelectronics; Nanoscale devices; Self-assembly; Shape; Silicon germanium; Strain measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1436654
Filename
1436654
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