Title :
A novel approach to evaluate the carrier effective mass in GeSi quantum dot structure
Author :
Yang, Zheng ; Shi, Yi ; Liu, Jian-Lin ; Yan, Bo ; Zhang, Rong ; Zheng, You-Dou ; Wang, Kang-Long
Author_Institution :
Dept. of Phys., Nanjing Univ., China
Abstract :
Carrier effective mass in the self-assembled GeSi quantum dots (QDs) grown by a solid-source molecular beam epitaxy (MBH) system has been studied with temperature-dependent photoluminescence (PL) and Raman scattering measurements. The temperature-dependence of the PL was fitted by the combination of Arrhenius and Berthelot type functions, from which a novel approach to evaluate the carrier effective mass has been proposed.
Keywords :
Ge-Si alloys; Raman spectra; molecular beam epitaxial growth; photoluminescence; semiconductor quantum dots; Arrhenius-Berthelot type function; GeSi; Raman scattering measurement; carrier effective mass; self-assembled GeSi quantum dots; solid-source molecular beam epitaxy; temperature-dependent photoluminescence; Effective mass; Germanium silicon alloys; Optical scattering; Quantum dots; Radiative recombination; Raman scattering; Silicon germanium; Spontaneous emission; Temperature; US Department of Transportation;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436655
