Title :
Recent progress in MOS compact modeling
Author :
Yu, Zhiping ; Tian, Lilin
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
Two major trends in MOS compact modeling: surface-potential and charge-control approaches, are reviewed. The aggressive scaling of CMOS technology towards sub-90nm regime calls for incorporation of ballistic transport in MOS compact model. Progress in developing quantum mechanically corrected, ballistic MOS model is presented.
Keywords :
CMOS integrated circuits; MIS devices; ballistic transport; semiconductor device models; surface potential; CMOS technology; MOS compact modeling; ballistic MOS model; ballistic transport; charge control; surface potential; Ballistic transport; Computational efficiency; Educational institutions; Equations; Iterative methods; MOSFETs; Production; Prototypes; Semiconductor device modeling; Voltage;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436656
