Title :
Simulation of RTD using quantum hydrodynamic model
Author :
Huang, Lei ; Yu, Zhiping ; Xiang, Cailan
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
The quantum hydrodynamic model (QHD) can be derived from quantum Boltzmann equation (QBE) and classical hydrodynamics conservation laws. In this dissertation, a self-consistent solver for the partial differential equations of one-dimensional (1D) QHD model is implemented and simulation results of a 1D resonant tunneling diode (RTD) are presented that shows charge build-up in the quantum well and negative differential resistance (NDR) in the I-V curve.
Keywords :
Boltzmann equation; partial differential equations; quantum wells; resonant tunnelling diodes; semiconductor device models; 1D QHD model; 1D resonant tunneling diode; I-V curve; classical hydrodynamics conservation law; negative differential resistance; partial differential equations; quantum Boltzmann equation; quantum hydrodynamic model; quantum well; Boltzmann equation; Electric potential; Electronic mail; Hydrodynamics; Microelectronics; Poisson equations; Resistance heating; Resonant tunneling devices; Semiconductor diodes; Temperature;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436674
