Title :
Simulation and analysis of the high frequency performances of SiGe HBT with quantum well base region
Author :
Yang, Weiming ; Shi, Chen ; Liu, Sujuan ; Chen, Jianxin
Author_Institution :
Beijing Optoelectronics Technol. Lab., Beijing Univ. of Technol., China
Abstract :
In this paper the structure and fabrication of a type of SiGe HBT with quantum well base region are introduced and analyzed. Based on this, the high frequency equivalent circuit model of SiGe HBT with modulation doped quantum well base region has been presented. Moreover the elements of the model are calculated according to the material structure and fabricating size. Then the high frequency characteristics are simulated and explained from the circuit model. The simulation results are in good agreement with that of the test. The cut off frequency fT=16GHz and the maximum oscillation frequency fmax=8GHz for the sample. It is of both higher cut off frequency and the maximum oscillation frequency fmax than the SiGe HBT without quantum well base region with the same size. When the fabricating size of SiGe HBT with quantum well base has been changed, the model still be effective, only the value of the elements of the model should be evaluated again.
Keywords :
Ge-Si alloys; equivalent circuits; heterojunction bipolar transistors; semiconductor device models; semiconductor quantum wells; silicon compounds; SiGe; SiGe HBT; cut off frequency; high frequency equivalent circuit model; maximum oscillation frequency; quantum well base region; Analytical models; Circuit simulation; Epitaxial layers; Equivalent circuits; Fabrication; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Performance analysis; Silicon germanium;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436676
