Title :
A simulation model of body contact structure in PD SOI analogue circuit
Author :
Fan, Jiang ; Zhong-Li, Liu
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
Abstract :
As a solution of accurate simulation of the body effect in PD SOI analogue circuit, a simulation model of distributed body contact resistance and parasitical capacitance is presented. Based on this model, we have designed and simulated a sense amplifier that applied to a 0.8μm PD SOI 64K SRAM.
Keywords :
SRAM chips; amplifiers; analogue circuits; contact resistance; silicon-on-insulator; 0.8 micron; PD SOI analogue circuit; SRAM; body contact structure; distributed body contact resistance; parasitical capacitance; sense amplifier; Charge pumps; Circuit simulation; Contact resistance; Diodes; Immune system; MOSFET circuits; Parasitic capacitance; Random access memory; SPICE; Solid modeling;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436679
