Title :
Non-quasi-static modeling of heterojunction bipolar transistors
Author :
Abdel-Motaleb, Ibrahim M.
Author_Institution :
Dept. of Electr. Eng., Northern Illinois Univ., DeKalb, IL, USA
Abstract :
A review of the different techniques of nonquasi-static (NQS) modeling of heterojunction bipolar transistors (HBTs) is presented. NQS modeling techniques can be divided into two categories: (a) physical models that are based on Gummel-Poon model and (b) empirical models that depend on parameter extractions. The nature of these models and their advantages and disadvantages are discussed in this paper.
Keywords :
heterojunction bipolar transistors; semiconductor device models; Gummel-Poon modeling; HBT; empirical modeling; heterojunction bipolar transistors; nonquasi-static modeling; physical modeling; Ambient intelligence; Application specific integrated circuits; Bipolar transistors; Capacitance; Circuit simulation; Inductance; Integral equations; SPICE; Senior members; Silicon;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436714
