DocumentCode
435942
Title
Small signal non-quasi-static model for AlGaN/GaN MODFETs
Author
Chintakayala, Radhika ; Abdel-Motaleb, Ibrahim
Author_Institution
Dept. of Electr. Eng., Northern Illinois Univ., DeKalb, IL, USA
Volume
2
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
1163
Abstract
A simple non-quasi-static model for AlGaN/GaN MODFETs has been developed. First a DC model has been obtained, where the effects of spontaneous and piezoelectric polarization, as well as the strain due to Aluminum mole fractions are incorporated. Using this DC model, a small signal non-quasi-static model is developed. The results show that the proposed model can predict the DC and the small signal characteristics of the device with high degrees of accuracy.
Keywords
III-V semiconductors; aluminium compounds; dielectric polarisation; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; DC model; MODFET; aluminum mole fraction; piezoelectric polarization; small signal nonquasistatic model; Aluminum gallium nitride; Capacitive sensors; Electrons; Epitaxial layers; Equations; Gallium nitride; HEMTs; MODFETs; Piezoelectric polarization; Predictive models;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1436729
Filename
1436729
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