Title :
Small signal non-quasi-static model for AlGaN/GaN MODFETs
Author :
Chintakayala, Radhika ; Abdel-Motaleb, Ibrahim
Author_Institution :
Dept. of Electr. Eng., Northern Illinois Univ., DeKalb, IL, USA
Abstract :
A simple non-quasi-static model for AlGaN/GaN MODFETs has been developed. First a DC model has been obtained, where the effects of spontaneous and piezoelectric polarization, as well as the strain due to Aluminum mole fractions are incorporated. Using this DC model, a small signal non-quasi-static model is developed. The results show that the proposed model can predict the DC and the small signal characteristics of the device with high degrees of accuracy.
Keywords :
III-V semiconductors; aluminium compounds; dielectric polarisation; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; DC model; MODFET; aluminum mole fraction; piezoelectric polarization; small signal nonquasistatic model; Aluminum gallium nitride; Capacitive sensors; Electrons; Epitaxial layers; Equations; Gallium nitride; HEMTs; MODFETs; Piezoelectric polarization; Predictive models;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436729
