Title :
A physics based analytical model of undoped body MOSFETs
Author :
He, Jin ; Xi, Jane ; Chan, Mansun ; Niknejad, Ali ; Chenming Mu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
A continuous physics based analytic model of undoped (or lightly doped) body MOSFETs has been derived in this paper by incorporating the solution of the Poisson equation into Pao-Sah integrated current equation using SPP approach. The closed form solutions of band bending and the inversion charge as a function of gate voltage and channel voltage were first derived from the combination of Gauss´s law with the Poisson equation. Then, a continuous non-charge-sheet-based analytical model is developed for the undoped body MOSFETs.
Keywords :
MOSFET; Poisson equation; semiconductor device models; semiconductor doping; Gauss law; Pao-Sah integrated current equation; Poisson equation; channel voltage; continuous physics; gate voltage; lightly doped body MOSFET; physics based analytical model; undoped body MOSFET; Analytical models; CMOS technology; Doping; Energy states; MOSFETs; Physics; Poisson equations; Positron emission tomography; Silicon; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436737
