A compact, continuous analytic I-V model for surrounding-gate MOSFETs

Based on current continuity equation and closed-form solutions of Poisson´s equation, a compact and continuous I-V model for surrounding-gate MOSFETs is developed. The simple form of I-V equation represents the entire drain current characteristics including all regions of MOSFET operation; linear, saturation and subthreshold. Compared to conventional charge-sheet approximation, tins approach preserves physical volume-inversion phenomena and easily predicts the drain current characteristics without assumed empirical smoothing function for correctness of piecewise approximation. It is shown that the I-V curves can be generated by this model and agree well with 2-D simulation results over a various drain biases. This model gives the exact I-V prediction for surrounding-gate transistor (SGT) and can be used for the application of SPICE simulation.