• DocumentCode
    435951
  • Title

    An improved strained-Si on Si1-xGex MOSFET mobility model

  • Author

    Yang, Zhao ; Dawei, Zhang ; Lilin, Tian

  • Author_Institution
    Inst. of Microelectron., Tsinghua Univ., Beijing, China
  • Volume
    2
  • fYear
    2004
  • fDate
    18-21 Oct. 2004
  • Firstpage
    1216
  • Abstract
    A new electron and hole mobility analytical model for strained-Si MOSFETs has been developed. The mobility enhancement in the strained silicon layer is accurately studied and described by means of simple analytical expressions. The dependence of mobility to strained-Si layer thickness in the model is highlighted, and as usual, the germanium mole fraction, surface roughness and the channel doping concentration are needed in the model. The model fits well extracted mobility data based on drain current measurements and Monte Carlo simulation results.
  • Keywords
    Ge-Si alloys; MOSFET; Monte Carlo methods; electron mobility; hole mobility; semiconductor device models; semiconductor doping; surface roughness; MOSFET mobility model; Monte Carlo simulation; SiGe; channel doping concentration; drain current measurements; electron mobility analytical model; germanium mole fraction; hole mobility analytical model; mobility enhancement; strained-Si; surface roughness; Analytical models; Charge carrier processes; Doping; Electron mobility; Germanium; MOSFETs; Rough surfaces; Semiconductor process modeling; Silicon; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
  • Print_ISBN
    0-7803-8511-X
  • Type

    conf

  • DOI
    10.1109/ICSICT.2004.1436749
  • Filename
    1436749
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=435951