DocumentCode :
435957
Title :
A concurrent 0.18-μm CMOS self-biased dual-band driver amplifier for IEEE 802.11 a/b/g
Author :
Jou, Christina F. ; Cheng, Kuo-Hua ; Chen, Jia-Liang
Author_Institution :
Inst. of Commun. Eng., National Chiao Tung Univ., Hsinchu, Taiwan
Volume :
2
fYear :
2004
fDate :
18-21 Oct. 2004
Firstpage :
1264
Abstract :
A 2.4 GHz/5.2 GHz self-biased dual band CMOS driver amplifier with a 9.8-dBm output power using TSMC 0.18-μm 1P6M standard CMOS process is described. The CMOS amplifier designed on Rogers RO4003 printed-circuit-board (PCB) with a single input and a single output signal chain is simultaneously optimized for wireless local area network (WLAN) 2.4 GHz/5.2 GHz applications. Simulation results show that the driver amplifier exhibits an output power about 9.7-dBm in both 2.4 GHz and 5.2 GHz, output interception point (OIP3) of 24dBm with power added efficiency (PAE)=27% and PAE=24% in 2.4GHz and 5.2 GHz respectively. The die size is 0.85×0.7 mm2.
Keywords :
CMOS integrated circuits; UHF amplifiers; integrated circuit design; printed circuit design; 2.4 GHz; 5.2 GHz; CMOS driver amplifier; Rogers RO4003 printed circuit board; output interception point; power added efficiency; self-biased dual-band driver amplifier; standard CMOS process; wireless local area network; CMOS process; Driver circuits; Dual band; OFDM; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Voltage; Wireless LAN;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
Type :
conf
DOI :
10.1109/ICSICT.2004.1436766
Filename :
1436766
Link To Document :
بازگشت