DocumentCode :
436706
Title :
Development of monte carlo modeling for proton induced charge in si pin photodiode
Author :
Onoda, S. ; Hirao, T. ; Laird, J.S. ; Wakasa, T. ; Yamakawa, T. ; Okamoto, T. ; Koizumi, Y. ; Kamiya, T.
fYear :
2003
fDate :
15-19 Sept. 2003
Firstpage :
89
Lastpage :
93
Keywords :
Bit error rate; Current measurement; Databases; Degradation; Monte Carlo methods; Nuclear power generation; Optical receivers; PIN photodiodes; Protons; Single event upset;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2003. RADECS 2003. Proceedings of the 7th European Conference on
Conference_Location :
Noordwijk, The Netherlands
ISSN :
0379-6566
Print_ISBN :
92-9092-846-8
Type :
conf
Filename :
1442403
Link To Document :
بازگشت