مرکز منطقه ای اطلاع رساني علوم و فناوري - Effect of the epitaxial layer features on the reliability of medium blocking voltage power VDMOSFET during heavy ION exposure

DocumentCode :

436742

Title :

Effect of the epitaxial layer features on the reliability of medium blocking voltage power VDMOSFET during heavy ION exposure

Author :

Velardi, F. ; Iannuzzo, F. ; Busatto, G. ; Wyss, J. ; Sanseverino, A. ; Candelori, A. ; Currò, G. ; Cascio, A. ; Frisina, F. ; Cavagnoli, A.

fYear :

2003

fDate :

15-19 Sept. 2003

Firstpage :

321

Lastpage :

325

Keywords :

Aerospace safety; Epitaxial layers; Failure analysis; Ionization; MOSFETs; Medium voltage; Read only memory; Silicon; Statistical analysis; Testing;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Radiation and Its Effects on Components and Systems, 2003. RADECS 2003. Proceedings of the 7th European Conference on

Conference_Location :

Noordwijk, The Netherlands

ISSN :

0379-6566

Print_ISBN :

92-9092-846-8

Type :

conf

Filename :

1442467

Link To Document :