DocumentCode :
436751
Title :
Ionization-induced carrier transport in InAlAs/InGaAs high electron mobility transistors
Author :
McMorrow, Dale ; Knudson, A.R. ; Boos, J. Brad ; Park, Doe ; Melinger, Joseph S.
fYear :
2003
fDate :
15-19 Sept. 2003
Firstpage :
385
Lastpage :
392
Keywords :
Current measurement; HEMTs; Indium compounds; Indium gallium arsenide; Logic arrays; MODFETs; Microwave FETs; Optical pulses; Pulse measurements; Space technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2003. RADECS 2003. Proceedings of the 7th European Conference on
Conference_Location :
Noordwijk, The Netherlands
ISSN :
0379-6566
Print_ISBN :
92-9092-846-8
Type :
conf
Filename :
1442487
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=436751
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